Ag/HfO<inf>2</inf> based threshold switch with extreme non-linearity for unipolar cross-point memory and steep-slope phase-FETs-Reference-Cited by-同舟云学术

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Ag/HfO2 based threshold switch with extreme non-linearity for unipolar cross-point memory and steep-slope phase-FETs

Published:2016-12 Issue: Volume: Page:
ISSN:
Container-title:2016 IEEE International Electron Devices Meeting (IEDM)
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Author:

Shukla N.,Grisafe B.,Ghosh R. K.,Jao N.,Aziz A.,Frougier J.,Jerry M.,Sonde S.,Rouvimov S.,Orlova T.,Gupta S.,Datta S.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/7824662/7838021/07838542.pdf?arnumber=7838542

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