Mechanisms of Electromigration Damage in Cu Interconnects-Reference-Cited by-同舟云学术

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Mechanisms of Electromigration Damage in Cu Interconnects

Published:2018-12 Issue: Volume: Page:
ISSN:
Container-title:2018 IEEE International Electron Devices Meeting (IEDM)
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Author:

Hu C.-K.,Gignac L.,Lian G.,Cabral C.,Motoyama K.,Shobha H.,Demarest J.,Ostrovski Y.,Breslin C. M.,Ali M.,Benedict J.,McLaughlin P. S.,Ni J.,Liu X. H.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/8601505/8614478/08614678.pdf?arnumber=8614678

Cited by 9 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Electromigration in Nano-Interconnects: Determining Reliability Margins in Redundant Mesh Networks Using a Scalable Physical–Statistical Hybrid Paradigm;Micromachines;2024-07-26

2. Deposition of N-Heterocyclic Carbenes on Reactive Metal Substrates─Applications in Area-Selective Atomic Layer Deposition;Chemistry of Materials;2024-05-28

3. In Situ Analysis of Copper Microstructures in Electromigration Using SEM-EBSD Techniques;2024 IEEE 74th Electronic Components and Technology Conference (ECTC);2024-05-28

4. A Modeling Study of Stacked Cu-CNT TSV on Electrical, Thermal, and Reliability Analysis;IEEE Transactions on Electron Devices;2024-01

5. Recent Trends in Copper Metallization;Electronics;2022-09-14

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