A 130 nm InP HBT integrated circuit technology for THz electronics-Reference-Cited by-同舟云学术

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A 130 nm InP HBT integrated circuit technology for THz electronics

Published:2016-12 Issue: Volume: Page:
ISSN:
Container-title:2016 IEEE International Electron Devices Meeting (IEDM)
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Author:

Urteaga M.,Hacker J.,Griffith Z.,Young A.,Pierson R.,Rowell P.,Seo M.,Rodwell M. J. W.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/7824662/7838021/07838503.pdf?arnumber=7838503

Cited by 25 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. High-performance uniform stepper-based InP double-heterojunction bipolar transistor (DHBT) on a 3-inch InP substrate;Solid-State Electronics;2024-07

2. 220-GHz High-Efficiency Power Amplifiers in 250-nm and 130-nm InP HBT Technologies Having 14.4-25.0% PAE and 40-60 mW $\mathrm{P}_{\text{out}}$;2024 IEEE/MTT-S International Microwave Symposium - IMS 2024;2024-06-16

3. InP-based Double-heterojunction Bipolar Transistors for Large-capacity Optical Communication Systems;The Journal of The Institute of Electrical Engineers of Japan;2024-06-01

4. A 220-GHz Power Amplifier With 60-mW P _out and 23.5% PAE in 130-nm InP HBT;IEEE Microwave and Wireless Technology Letters;2024-04

5. Introduction to 5G applications and beyond;New Materials and Devices Enabling 5G Applications and Beyond;2024

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