Process variation effect, metal-gate work-function fluctuation and random dopant fluctuation of 10-nm gate-all-around silicon nanowire MOSFET devices-Reference-Cited by-同舟云学术

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Process variation effect, metal-gate work-function fluctuation and random dopant fluctuation of 10-nm gate-all-around silicon nanowire MOSFET devices

Published:2015-12 Issue: Volume: Page:
ISSN:
Container-title:2015 IEEE International Electron Devices Meeting (IEDM)
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Author:

Li Yiming,Chang Han-Tung,Lai Chun-Ning,Chao Pei-Jung,Chen Chieh-Yang

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/7402013/7409598/07409827.pdf?arnumber=7409827

Cited by 26 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Statistical Device Simulation and Machine Learning of Process Variation Effects of Vertically Stacked Gate-All-Around Si Nanosheet CFETs;IEEE Transactions on Nanotechnology;2024

2. Nanosized-Metal-Grain-Pattern-Dependent Threshold-Voltage Models for the Vertically Stacked Multichannel Gate-All-Around Si Nanosheet MOSFETs and Their Applications in Circuit Simulation;IEEE Transactions on Electron Devices;2024-01

3. Study of Nanosheet Performance by Varying the Aspect Ratio;2023 World Conference on Communication & Computing (WCONF);2023-07-14

4. Intrinsic Parameter Fluctuation and Process Variation Effect of Vertically Stacked Silicon Nanosheet Complementary Field-Effect Transistors;2023 24th International Symposium on Quality Electronic Design (ISQED);2023-04-05

5. Electrical Characteristic and Power Fluctuations of GAA Si NS CFETs by Simultaneously Considering Six Process Variation Factors;IEEE Open Journal of Nanotechnology;2023

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