High-speed switching and current-collapse-free operation by GaN gate injection transistors with thick GaN buffer on bulk GaN substrates-Reference-Cited by-同舟云学术

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High-speed switching and current-collapse-free operation by GaN gate injection transistors with thick GaN buffer on bulk GaN substrates

Published:2016-12 Issue: Volume: Page:
ISSN:
Container-title:2016 IEEE International Electron Devices Meeting (IEDM)
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Author:

Handa Hiroyuki,Ujita Shinji,Shibata Daisuke,Kajitani Ryo,Shiozaki Nanako,Ogawa Masahiro,Umeda Hidekazu,Tanaka Kenichiro,Tamura Satoshi,Hatsuda Tsuguyasu,Ishida Masahiro,Ueda Tetsuzo

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/7824662/7838021/07838387.pdf?arnumber=7838387

Cited by 12 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Design Optimization of an Enhanced-Mode GaN HEMT with Hybrid Back Barrier and Breakdown Voltage Prediction Based on Neural Networks;Electronics;2024-07-25

2. Analysis and simulation of bulk polarization mechanism in p-GaN HEMT with AI component gradient buffer layer;Semiconductor Science and Technology;2024-06-18

3. Investigation of Double RESURF P-GaN Gate AlGaN/GaN Heterostructure Field-Effect Transistors with Partial N-GaN Channels;Journal of Electronic Materials;2024-03-14

4. GaN Super-Heterojunction FETs With 10-kV Blocking and 3-kV Dynamic Switching;IEEE Transactions on Electron Devices;2024-02

5. Design of High Baliga’s Figure-of-Merit P-GaN Gate AlGaN/GaN Heterostructure Field-Effect Transistors with P-AlGaN Field Plates;Journal of Electronic Materials;2023-04-03

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