High density ST-MRAM technology (Invited)-Reference-Cited by-同舟云学术

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High density ST-MRAM technology (Invited)

Published:2012-12 Issue: Volume: Page:
ISSN:
Container-title:2012 International Electron Devices Meeting
language:
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Author:

Slaughter J. M.,Rizzo N. D.,Janesky J.,Whig R.,Mancoff F. B.,Houssameddine D.,Sun J. J.,Aggarwal S.,Nagel K.,Deshpande S.,Alam S. M.,Andre T.,LoPresti P.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/6471855/6478950/06479128.pdf?arnumber=6479128

Cited by 17 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

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2. Modelling of Magnetic Stray Fields in Multilayer Magnetic Films with In-Plane or Perpendicular Anisotropy;Magnetochemistry;2022-11-19

3. Investigation of perpendicular magnetic anisotropy in CoFeMnSi based heterostructures;Journal of Magnetism and Magnetic Materials;2022-11

4. Enabling Edge Computing Using Emerging Memory Technologies: From Device to Architecture;Frontiers of Quality Electronic Design (QED);2022-09-06

5. Mechanism of field-like torque in spin-orbit torque switching of perpendicular magnetic tunnel junction;Science China Physics, Mechanics & Astronomy;2022-09-02

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