Radically extending the cycling endurance of Flash memory (to > 100M Cycles) by using built-in thermal annealing to self-heal the stress-induced damage-Reference-Cited by-同舟云学术

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Radically extending the cycling endurance of Flash memory (to > 100M Cycles) by using built-in thermal annealing to self-heal the stress-induced damage

Published:2012-12 Issue: Volume: Page:
ISSN:
Container-title:2012 International Electron Devices Meeting
language:
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Author:

Lue Hang-Ting,Du Pei-Ying,Chen Chih-Ping,Chen Wei-Chen,Hsieh Chih-Chang,Hsiao Yi-Hsuan,Shih Yen-Hao,Lu Chih-Yuan

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/6471855/6478950/06479008.pdf?arnumber=6479008

Cited by 24 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Life-after-Death: Exploring Thermal Annealing Conditions to Enhance 3D NAND SSD Endurance;Proceedings of the 16th ACM Workshop on Hot Topics in Storage and File Systems;2024-07-08

2. Overcome the End of Life of 3D Flash Memory by Recovery Annealing, Aiming for Carbon Neutrality in Semiconductor Manufacturing;2024 IEEE International Memory Workshop (IMW);2024-05-12

3. Investigating Device Degradation and Revival in Resistive Random Access Memory;2023 IEEE International Integrated Reliability Workshop (IIRW);2023-10-08

4. Effectiveness of Repairing Hot Carrier Degradation in Si p-FinFETs Using Gate Induced Drain Leakage;IEEE Electron Device Letters;2023-03

5. Highly Efficient Self-Curing Method in MOSFET Using Parasitic Bipolar Junction Transistor;IEEE Electron Device Letters;2022-07

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