Effectiveness of Repairing Hot Carrier Degradation in Si p-FinFETs Using Gate Induced Drain Leakage-Reference-Cited by-同舟云学术

Effectiveness of Repairing Hot Carrier Degradation in Si p-FinFETs Using Gate Induced Drain Leakage

Published:2023-03 Issue:3 Volume:44 Page:372-375
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Chang Hao¹^ORCID,Liu Qianqian¹,Yang Hong¹^ORCID,Zhou Longda²,Ji Zhigang²^ORCID,Tang Bo¹,Zhang Qingzhu¹^ORCID,Yin Huaxiang¹^ORCID,Du Anyan¹^ORCID,Li Junfeng¹,Luo Jun¹^ORCID,Wang Wenwu¹

Affiliation:

1. Key Laboratory of Microelectronics Devices and Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, China

2. National Key Laboratory of Science and Technology on Micro/Nano Fabrication, Shanghai Jiaotong University, Shanghai, China

Funder

National Natural Science Foundation of China

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/55/10053585/10034762.pdf?arnumber=10034762

Reference23 articles.

1. System On Microheater for On-Chip Annealing of Defects Generated by Hot-Carrier Injection, Bias Temperature Instability, and Ionizing Radiation

2. A Comparative Study of the Curing Effects of Local and Global Thermal Annealing on a FinFET

3. Degradation Mechanism of Short Channel p- FinFETs under Hot Carrier Stress and Constant Voltage Stress

4. Curing of Aged Gate Dielectric by the Self-Heating Effect in MOSFETs

5. A new saw-like self-recovery of interface states in nitride-based memory cell

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