Charge-injection phase change memory with high-quality GeTe/Sb2Te3 superlattice featuring 70-μA RESET, 10-ns SET and 100M endurance cycles operations
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Publisher
IEEE
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http://xplorestaging.ieee.org/ielx7/6709840/6724533/06724725.pdf?arnumber=6724725
Cited by 22 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. A Review of Advances in Deposition Methods and Material Properties of Superlattice Phase-Change Memory;ACS Applied Electronic Materials;2023-10-25
2. Enhancement of thermal stability and device performances through XTe2/TaxSb2Te3-based phase-change heterostructure;Applied Surface Science;2023-07
3. Enabling Active Nanotechnologies by Phase Transition: From Electronics, Photonics to Thermotics;Chemical Reviews;2022-07-27
4. Internal reverse-biased p–n junctions: A possible origin of the high resistance in chalcogenide superlattice for interfacial phase change memory;Applied Physics Letters;2022-02-14
5. Universal memory based on phase-change materials: From phase-change random access memory to optoelectronic hybrid storage*;Chinese Physics B;2021-05-01
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