Internal reverse-biased p–n junctions: A possible origin of the high resistance in chalcogenide superlattice for interfacial phase change memory-Reference-Cited by-同舟云学术

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Internal reverse-biased p–n junctions: A possible origin of the high resistance in chalcogenide superlattice for interfacial phase change memory

Published:2022-02-14 Issue:7 Volume:120 Page:073504
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Li Bowen¹,Xu Longlong²,Guo Yuzheng³,Li Huanglong¹⁴^ORCID

Affiliation:

1. Department of Precision Instrument, Center for Brain Inspired Computing Research, Tsinghua University, Beijing, China

2. School of Materials Science and Engineering, Tsinghua University, Beijing, China

3. College of Engineering, Swansea University, Swansea SA1 8EN, United Kingdom

4. Chinese Institute for Brain Research, Beijing, China

Funder

National Natural Science Foundation of China

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

https://aip.scitation.org/doi/pdf/10.1063/5.0081865

Reference42 articles.

1. Reversible Electrical Switching Phenomena in Disordered Structures

2. Characteristics of Semiconducting Glass Switching/Memory Diodes

3. Phase-change random access memory: A scalable technology

4. Phase-change materials for rewriteable data storage

5. Platform Storage Performance With 3D XPoint Technology

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A Review of Advances in Deposition Methods and Material Properties of Superlattice Phase-Change Memory;ACS Applied Electronic Materials;2023-10-25

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