Demonstration of 1200V Scaled IGBTs Driven by 5V Gate Voltage with Superiorly Low Switching Loss-Reference-Cited by-同舟云学术

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Demonstration of 1200V Scaled IGBTs Driven by 5V Gate Voltage with Superiorly Low Switching Loss

Published:2018-12 Issue: Volume: Page:
ISSN:
Container-title:2018 IEEE International Electron Devices Meeting (IEDM)
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Author:

Saraya T.,Itou K.,Takakura T.,Fukui M.,Suzuki S.,Takeuchi K.,Tsukuda M.,Numasawa Y.,Satoh K.,Matsudai T.,Saito W.,Kakushima K.,Hoshii T.,Furukawa K.,Watanabe M.,Shigyo N.,Tsutsui K.,Iwai H.,Ogura A.,Nishizawa S.,Omura I.,Ohashi H.,Hiramoto T.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/8601505/8614478/08614491.pdf?arnumber=8614491

Cited by 23 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Impact of Scaling on Back-Gate-Controlled IGBT (BC-IGBT);IEEJ Transactions on Electronics, Information and Systems;2024-03-01

2. Analysis of Surge Voltage during Turn-Off Switching of IGBTs;IEEJ Transactions on Electronics, Information and Systems;2024-03-01

3. Robust reverse bias safe operating area and improved electrical performance in 3300 V non-proportionally scaled insulated gate bipolar transistors;Japanese Journal of Applied Physics;2024-01-19

4. Single-Back and Double-Front Gate-Controlled IGBT for Achieving Low Turn-Off Loss;2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD);2023-05-28

5. A 15V operated Shallow Trench IGBT(ST-IGBT) fabricated by low temperature process and optimized for 12inch wafers;2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD);2023-05-28

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