The Packaging Design for a SiC MOSFET Power Module with High-Temperature Characteristics
Author:
Affiliation:
1. Hefei University of Technology,School of Electrical Engineering and Automation,Hefei,China
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/9958944/9959090/09959323.pdf?arnumber=9959323
Reference11 articles.
1. Opportunities, Challenges, and Potential Solutions in the Application of Fast-Switching SiC Power Devices and Converters
2. Recent progress of power semiconductor devices and their futures
3. Survey of High-Temperature Polymeric Encapsulants for Power Electronics Packaging;yao;IEEE Transactions on Components Packaging and Manufacturing Technology,2015
4. A novel hybrid packaging structure for high-temperature SiC power modules
5. A Novel High-Temperature Planar Package for SiC Multi-Chip Phase-Leg Power Module
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Impact of Temperature on Neutron Irradiation Failure-in-Time of Silicon and Silicon Carbide Power MOSFETs;Radiation;2023-05-30
2. A Reliable Packaging Design for 1200-V, 500-A SiC Half-bridge Modules with Junction Temperature over 200 °C;2023 IEEE 6th International Electrical and Energy Conference (CIEEC);2023-05-12
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