Factors Influencing the Accuracy of Switching Characterization for SiC MOSFET
Author:
Affiliation:
1. Fudan University,Academy for Engineering and Technology,Shanghai,China
2. UniSiC Technology Co., Ltd,Shanghai,China
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/9941506/9941741/09942065.pdf?arnumber=9942065
Reference10 articles.
1. An Improved Active Crosstalk Suppression Method for High-Speed SiC MOSFETs
2. Investigation of the Gate Resistance and the RC snubbers on the EMI Suppression in Applying of the SiC MOSFET
3. VE-Trac SiC Inverter Module 1200 V;2 8 m? Single Side Direct Cooling 6-Pack Power Module,0
4. Double pulse test based switching characterization of SiC MOSFET
5. Inaccuracy and Instability: Challenges of SiC MOSFET Transient Measurement Intruded by Probes
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