Double pulse test based switching characterization of SiC MOSFET-Reference-Cited by-同舟云学术

登录注册会员服务联系我们

Double pulse test based switching characterization of SiC MOSFET

Published:2017-12 Issue: Volume: Page:
ISSN:
Container-title:2017 National Power Electronics Conference (NPEC)
language:
Short-container-title:

Author:

Ahmad S. S.,Narayanan G.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/8304403/8310424/08310478.pdf?arnumber=8310478

Cited by 26 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A Systematic Methodology for Parasitic Capacitance Estimation and Validation of Multichip Modules;IEEE Transactions on Industrial Electronics;2024-03

2. A SiC MOSFET-Based Auxiliary Resonant Commutated Pole Inverter with Simple Auxiliary Resonant Circuit and Improved Modulation Strategy;2023 26th International Conference on Electrical Machines and Systems (ICEMS);2023-11-05

3. Fully Modular, Dynamic SiC and GaN Testbench with Automated Temperature and Gate-Voltage Characterization;2023 IEEE Design Methodologies Conference (DMC);2023-09-24

4. Design and Control Strategy of High Voltage Power Module for Double Pulse Testing Applications of Wide Band Gap Devices;2023 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia);2023-08-27

5. A Comprehensive Guide for Optimizing the switching of an Automotive Grade MOSFET in a Half-Bridge Topology;2023 International Conference on Control, Communication and Computing (ICCC);2023-05-19

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370

www.globalauthorid.com

TOP