A method for SiC MOSFETs gate oxide degradation monitoring based on turn-on di/dt delay time-Reference-Cited by-同舟云学术

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A method for SiC MOSFETs gate oxide degradation monitoring based on turn-on di/dt delay time

Published:2022-10-28 Issue: Volume: Page:
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Container-title:2022 IEEE Transportation Electrification Conference and Expo, Asia-Pacific (ITEC Asia-Pacific)
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Author:

Kang Jianlong¹,Wu Qiang²,Chen Yu³,Xu He³,Luo Haoze²,Xin Zhen¹

Affiliation:

1. Hebei University of Technology Hongqiao District,State Key Laboratory of Reliability and Intelligence of Electrical Equipment,Tianjin,China

2. ZJU-Hangzhou Global Scientiftc and Technological Innovation Center,Hangzhou,Zhejiang Province,China

3. Zhejiang University,College of Electrical Engineering,Hangzhou,Zhejiang Province,China

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9941506/9941741/09941951.pdf?arnumber=9941951

Reference8 articles.

1. Degradation Assessment and Precursor Identification for SiC MOSFETs Under High Temp Cycling

2. A Method for the Measurement of the Threshold-Voltage Shift of SiC MOSFETs During Power Cycling Tests

3. Temperature-Independent Gate-Oxide Degradation Monitoring of SiC MOSFETs Based on Junction Capacitances

4. Degradation Assessment of SiC MOSFETs under the Repetitive Short Circuit Ageing with Different Gate-Source Voltage Bias

5. Characterization of SiO2/4H-SiC Interfaces in 4H-SiC MOSFETs: A Review

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