Analysis of High-temperature Parasitic False Turn-on in a SiC MOSFET Half-bridge Circuit
Author:
Affiliation:
1. Fudan University,Academy for Engineering and Technology,China,Shanghai
2. UniSiC Technology Co., Ltd,Shanghai,China
3. Fudan University,Academy for Engineering and Technology,Shanghai,China
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/9941506/9941741/09941747.pdf?arnumber=9941747
Reference12 articles.
1. Characterization and Detailed Analysis of The Crosstalk With SiC MOSFET
2. CMOS gate drive IC with embedded cross talk suppression circuitry for SiC devices
3. Switching behavior method to estimate the intrinsic gate resistance of a transistor by using the gate plateau voltage
4. A Low Level-Clamped Active Gate Driver for Crosstalk Suppression of SiC MOSFET Based on dv/dt Detection
5. Modeling of temperature effect on threshold voltage of ballistic Ge tunneling FET
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