Characterization and Detailed Analysis of The Crosstalk With SiC MOSFET
Author:
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/8730292/8734525/08734655.pdf?arnumber=8734655
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. SiC MOSFET Crosstalk Modelling with Suppression Considering Impacts of dv/dt and di/dt;2023 11th International Conference on Power Electronics and ECCE Asia (ICPE 2023 - ECCE Asia);2023-05-22
2. A Novel SiC MOSFET Crosstalk Clamp Circuit Based on BJT Common -Base and Common- Collector;2022 5th International Conference on Power and Energy Applications (ICPEA);2022-11-18
3. Analysis of High-temperature Parasitic False Turn-on in a SiC MOSFET Half-bridge Circuit;2022 IEEE Transportation Electrification Conference and Expo, Asia-Pacific (ITEC Asia-Pacific);2022-10-28
4. An Improved Analytical Model for Crosstalk of SiC MOSFET in a Bridge-Arm Configuration;Energies;2021-01-28
5. Gate Driver for Wide-Bandgap Power Semiconductors With Small Negative Spike and Switching Ringing in Zero-Voltage Switching Circuit;IEEE Access;2021
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