Paradigm Changes in Power Electronics Caused by Emerging Materials
Author:
Affiliation:
1. University of Rijeka,Faculty of Engineering,Rijeka,Croatia
2. Universita degli Studi Niccolo Cusano of Rome,Rome,Italy
3. Poznan University of Technology,Poznan,Poland
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10036153/10036484/10036673.pdf?arnumber=10036673
Reference16 articles.
1. Comparative efficiency analysis for silicon, silicon carbide MOSFETs and IGBT device for DC–DC boost converter
2. Wide Bandgap Devices in AC Electric Drives: Opportunities and Challenges
3. SiC power MOSFETs performance, robustness and technology maturity
4. High-frequency switching limitations in Gallium Nitride (GaN) and Silicon Carbide (SiC) power devices for boost converter applications
5. Wide-Bandgap-Based Power Devices: Reshaping the power electronics landscape
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