High-frequency switching limitations in Gallium Nitride (GaN) and Silicon Carbide (SiC) power devices for boost converter applications
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Publisher
IEEE
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http://xplorestaging.ieee.org/ielx7/6600725/6645280/06645319.pdf?arnumber=6645319
Cited by 10 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. PWM Algorithms and Emerging Semiconductor Technologies;2023 2nd International Conference on Power Systems and Electrical Technology (PSET);2023-08-25
2. Gallium Nitride (GaN) Device - Study and Application in Power Electronics;2023 International Conference on Smart Systems for applications in Electrical Sciences (ICSSES);2023-07-07
3. Exploring Gallium Nitride as a Viable Replacement for High Power and Performance Semiconductors: A Comparative Study of Electrical Properties and Fabrication Techniques;Journal of Materials and Polymer Science;2023-03-06
4. Analytical Framework of S-Parameter-Based Efficiency for Secondary-Parallel Compensation WPT System to Authenticate Data Using VNA;IEEE Transactions on Instrumentation and Measurement;2023
5. Compact Solid-State Marx Modulator With Fast Switching for Nanosecond Pulse;IEEE Transactions on Power Electronics;2022-08
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