Impact of Ge Mole Fraction on the Performance of Si<sub>1-x</sub>Ge<sub>x</sub>/InAs Charged Plasma-Based JLTFET-Reference-Cited by-同舟云学术

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Impact of Ge Mole Fraction on the Performance of Si_1-xGe_x/InAs Charged Plasma-Based JLTFET

Published:2023-03-17 Issue: Volume: Page:
ISSN:
Container-title:2023 International Conference on Device Intelligence, Computing and Communication Technologies, (DICCT)
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Author:

Kumar Kaushal¹,Yadav Preeti¹,Sharma Subhash Chander¹

Affiliation:

1. Indian Institute of Technology,Electronics & Computer Discipline,Roorkee,India

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10110034/10110036/10110175.pdf?arnumber=10110175

Reference12 articles.

1. Tunneling Field-Effect Transistors (TFETs) With Subthreshold Swing (SS) Less Than 60 mV/dec

2. Controlling Ambipolar Current in Tunneling FETs Using Overlapping Gate-on-Drain

3. Implementation of Band Gap and Gate Oxide Engineering to Improve the Electrical Performance of SiGe/InAs Charged Plasma-Based Junctionless-TFET

4. Junctionless Tunnel Field Effect Transistor

5. Impact of band gap and gate dielectric engineering on novel Si0.1Ge0.9-GaAs lateral N-type charge plasma based JLTFET

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Unlocking the Tunnel: A Review of Tunnel Field-Effect Transistors Technology;2024 2nd International Conference on Device Intelligence, Computing and Communication Technologies (DICCT);2024-03-15

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