Implementation of Band Gap and Gate Oxide Engineering to Improve the Electrical Performance of SiGe/InAs Charged Plasma-Based Junctionless-TFET
Author:
Publisher
Springer Science and Business Media LLC
Subject
Electronic, Optical and Magnetic Materials
Link
https://link.springer.com/content/pdf/10.1007/s12633-022-02111-w.pdf
Reference35 articles.
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