Controlling the Ambipolar current by using Graded drain doped TFET
Author:
Affiliation:
1. Meerut Institute of Engineering and Technology,Electronics and Communication Engineering,Meerut,India
2. Motilal Nehru National Institute of Technology Allahabad,Electronics and Communication Engineering,Priyagraj,India
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10110034/10110036/10110171.pdf?arnumber=10110171
Reference15 articles.
1. Analog and RF performance of a multigate FinFET at nano scale
2. Simulation Study of the Double-Gate Tunnel Field-Effect Transistor with Step Channel Thickness
3. Optimizing FinFET parameters for minimizing short channel effects
4. Analytical modelling of subthreshold characteristics of RE-GAA FinFET using center potential
5. A Novel Twofold Tunnel FET With Reduced Miller Capacitance: Proposal and Investigation
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