An analytical MOSFET model including gate voltage dependence of channel length modulation parameter for 20nm CMOS-Reference-Cited by-同舟云学术

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An analytical MOSFET model including gate voltage dependence of channel length modulation parameter for 20nm CMOS

Published:2008 Issue: Volume: Page:
ISSN:
Container-title:2008 International Conference on Electrical and Computer Engineering
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Author:

Akira Hiroki ,Akihiro Yamate ,Masayoshi Yamada

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx5/4753886/4769162/04769188.pdf?arnumber=4769188

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