Generation of SiO2 Interface States at Low Temperature with Ionizing Irradiation-Reference-Cited by-同舟云学术

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Generation of SiO2 Interface States at Low Temperature with Ionizing Irradiation

Published:1981-12 Issue:6 Volume:28 Page:4074-4079
ISSN:0018-9499
Container-title:IEEE Transactions on Nuclear Science
language:
Short-container-title:IEEE Trans. Nucl. Sci.

Author:

Bluzer N.,Affinito D.,Blaha F. C.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Nuclear Energy and Engineering,Nuclear and High Energy Physics

Link

http://xplorestaging.ieee.org/ielx5/23/4335641/04335677.pdf?arnumber=4335677

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Radiation Effects and Low-Frequency Noise in Silicon Technologies;Low Temperature Electronics;2001

2. Process Dependent Build-Up of Interface States in Irradiated N-Channel MOSFETs;IEEE Transactions on Nuclear Science;1985-12

3. Characterization of the Si-SiO2 Interface;VLSI Electronics Microstructure Science;1985

4. Interface states at the SiO2-Si interface;Surface Science;1983-09

5. Radiation Effects in N-Channel MNOS CCDs at Low Temperature;IEEE Transactions on Nuclear Science;1983

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