VO<sub>2</sub> Nanocrystals Array for Low-Power Resistive Switches-Reference-Cited by-同舟云学术

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VO₂ Nanocrystals Array for Low-Power Resistive Switches

Published:2022-06-30 Issue: Volume: Page:
ISSN:
Container-title:2022 IEEE 23rd International Conference of Young Professionals in Electron Devices and Materials (EDM)
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Author:

Kapoguzov Kirill E.¹,Mutilin Sergey V.²,Kichay Vadim N.³,Yakovkina Lyubov V.³,Voloshin Bogdan V.²,Seleznev Vladimir A.²

Affiliation:

1. Rzhanov Institute of Semiconductor Physics, SB RAS Novosibirsk State University,Novosibirsk,Russia

2. Rzhanov Institute of Semiconductor Physics, SB RAS,Novosibirsk,Russia

3. Nikolaev Institute of Inorganic Chemistry, SB RAS,Novosibirsk,Russia

Funder

Russian Science Foundation

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9855012/9854868/09855088.pdf?arnumber=9855088

Reference15 articles.

1. Role of Cone-Shaped Contacts in VO2 Nanoswitches

2. MOCVD growth and characterization of vanadium dioxide films

3. Multi-level operation in VO₂-based resistive switching devices

4. Nanoscale Imaging and Control of Volatile and Non‐Volatile Resistive Switching in VO 2

5. Low threshold voltage, highly stable electroforming-free threshold switching characteristics in VOx films-based device

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. The electrical properties of nitrogen-doped vanadium dioxide thin films grown by magnetron sputtering;Journal of Physics: Conference Series;2024-07-01

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