Nanoscale Imaging and Control of Volatile and Non‐Volatile Resistive Switching in VO 2-Reference-Cited by-同舟云学术

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Nanoscale Imaging and Control of Volatile and Non‐Volatile Resistive Switching in VO 2

Published:2020-11-23 Issue:50 Volume:16 Page:2005439
ISSN:1613-6810
Container-title:Small
language:en
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Author:

Shabalin Anatoly G.¹^ORCID,Valle Javier¹,Hua Nelson¹,Cherukara Mathew J.²,Holt Martin V.²,Schuller Ivan K.¹,Shpyrko Oleg G.¹^ORCID

Affiliation:

1. Department of Physics University of California San Diego La Jolla CA 92093 USA

2. Center for Nanoscale Materials Argonne National Laboratory Argonne IL 60439 USA

Funder

U.S. Department of Energy

Office of Science

Basic Energy Sciences

Office of Naval Research

Argonne National Laboratory

Publisher

Wiley

Subject

Biomaterials,Biotechnology,General Materials Science,General Chemistry

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/smll.202005439

Reference29 articles.

1. Challenges in materials and devices for resistive-switching-based neuromorphic computing

2. Memristive devices for computing

3. Training and operation of an integrated neuromorphic network based on metal-oxide memristors

4. Biological plausibility and stochasticity in scalable VO2 active memristor neurons

5. Mott Memory and Neuromorphic Devices

Cited by 33 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Local strain inhomogeneities during electrical triggering of a metal–insulator transition revealed by X-ray microscopy;Proceedings of the National Academy of Sciences;2024-08-15

2. Unique Coexistence of Two Resistive Switching Modes in a Memristor Device Enables Multifunctional Neuromorphic Computing Properties;ACS Applied Materials & Interfaces;2024-08-12

3. Tuning the Intrinsic Stochasticity of Resistive Switching in VO₂ Microresistors;Nano Letters;2024-05-17

4. Neuromorphic one-shot learning utilizing a phase-transition material;Proceedings of the National Academy of Sciences;2024-04-17

5. ZnO Nanoparticle-Induced Performance Enhancement of a Coumarin-Based Nonvolatile Memory Device;ACS Applied Engineering Materials;2024-04-09

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