Cryogenic Static and Dynamic Characterizations of 650 V Field Stop Trench Si IGBT
Author:
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/9645925/9645766/09645772.pdf?arnumber=9645772
Cited by 7 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
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2. Comparisons and Evaluations of Silicon and Wide Band Gap Devices at Cryogenic Temperature;IEEE Transactions on Industry Applications;2023-03
3. Characterizing Semiconductor Devices for All-Electric Aircraft;IEEE Access;2023
4. Overcurrent Test for GaN HEMT with Cryogenic Cooling;2022 IEEE Transportation Electrification Conference and Expo, Asia-Pacific (ITEC Asia-Pacific);2022-10-28
5. Power Relays Based Novel Circuit with Multiple Device Characterization Capability for Cryogenic Applications;2022 IEEE Transportation Electrification Conference & Expo (ITEC);2022-06-15
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