Design Considerations for Series-Connected SiC MOSFETs Operating at 100 kV/µs-Reference-Cited by-同舟云学术

Design Considerations for Series-Connected SiC MOSFETs Operating at 100 kV/µs

Published:2023-03-19 Issue: Volume: Page:
ISSN:
Container-title:2023 IEEE Applied Power Electronics Conference and Exposition (APEC)
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Author:

Ubostad Tobias Nieckula¹,Peftitsis Dimosthenis¹

Affiliation:

1. Norwegian University of Science and Technology,Department of Electric Power Engineering,Trondheim,Norway

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10131044/10130846/10131240.pdf?arnumber=10131240

Reference15 articles.

1. Active Gate Drive With Gate–Drain Discharge Compensation for Voltage Balancing in Series-Connected SiC MOSFETs

2. Active gate driving technique for series connecting SiC MOSFETs in the presence of gate pulse delay mismatch;miryala;IEEE Transactions on Industrial Electronics,2021

3. A Compact Gate Control and Voltage-Balancing Circuit for Series-Connected SiC MOSFETs and Its Application in a DC Breaker

4. A Modified RC Snubber With Coupled Inductor for Active Voltage Balancing of Series-Connected SiC MOSFETs

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1. Gate driver, snubber and circuit design considerations for fast‐switching series‐connected SiC MOSFETs;IET Power Electronics;2024-07-05

2. A Hybrid Current- and Voltage-Source Driver for Active Driving of Series-Connected SiC MOSFETs;IEEE Transactions on Power Electronics;2024-03

3. Power Module Design with Chip-Level Series-Connected SiC MOSFETs;2024 IEEE Applied Power Electronics Conference and Exposition (APEC);2024-02-25

4. Evaluation Bench with Voltage Balancing Capability for Series-Connected High Voltage SiC MOSFETs;2023 IEEE 2nd International Power Electronics and Application Symposium (PEAS);2023-11-10

5. A Hybrid Current and Voltage-Source Gate Driver for Series-Connected SiC MOSFETs;2023 11th International Conference on Power Electronics and ECCE Asia (ICPE 2023 - ECCE Asia);2023-05-22