Characterization of Structural and Dielectric Properties of Silicon Nitride Thin Films Deposited by PECVD
Author:
Affiliation:
1. Université de Toulouse, CNRS, INPT, UPS,LAPLACE,Toulouse,France
2. Analog Devices International,Limerick,Ireland
3. Université de Toulouse, ENSIACET, INPT,CIRIMAT,Toulouse,France
4. Analog Devices Incorporation,Wilmington,MA,USA
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx8/10613003/10613009/10613222.pdf?arnumber=10613222
Reference13 articles.
1. The preparation, properties and applications of silicon nitride thin films deposited by plasma-enhanced chemical vapor deposition
2. Silicon Nitride and Hydrogenated Silicon Nitride Thin Films: A Review of Fabrication Methods and Applications
3. Reliability and electric properties for PECVD a-SiN/sub x/:H films with an optical band-gap ranging from 2.5 to 5.38 eV
4. Improving Polyimide Isolation Performance by Tailoring Interfaces with Nitride Layers for Digital Isolator Application
5. Plasma Deposition and Characterization of Thin Silicon‐Rich Silicon Nitride Films
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