A 160-GHz, 10-dBm power amplifier for D-band communication in 0.1-μm GaAs pHEMT-Reference-Cited by-同舟云学术

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A 160-GHz, 10-dBm power amplifier for D-band communication in 0.1-μm GaAs pHEMT

Published:2023-01-22 Issue: Volume: Page:
ISSN:
Container-title:2023 IEEE Topical Conference on RF/Microwave Power Amplifiers for Radio and Wireless Applications
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Author:

Soma Tatsuya¹,Ito Masaharu¹,Wada Yasushi¹

Affiliation:

1. NEC Corporation,Kawasaki,Kanagawa,Japan

Funder

Ministry of Internal Affairs and Communications

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10046198/10046211/10046251.pdf?arnumber=10046251

Reference7 articles.

1. A Wideband W-Band Driver Amplifier in 0.1 μm GaAs Process

2. D-band Transceiver Utilizing 70-nm GaAs-mHEMT Technology for FDD System

3. Spectrum Efficient D-band Communication Link for Real-time Multi-gigabit Wireless Transmission

4. Full W-band power amplifier/combiner utilizing GaAs technology

5. 150 GHz GaAs amplifiers in a commercial 0.1-μm GaAs PHEMT process

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1. A 360 GHz Fully Integrated Differential Signal Source With 106.7 GHz Continuous Tuning Range in 90 nm SiGe:C BiCMOS;IEEE Transactions on Microwave Theory and Techniques;2024-08

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