1/f Noise Characterizing Method of MOSFET Devices and Processes by the Power Spectral Density Integrated Method-Reference-Cited by-同舟云学术

登录注册会员服务联系我们

1/f Noise Characterizing Method of MOSFET Devices and Processes by the Power Spectral Density Integrated Method

Published:2022-11-28 Issue: Volume: Page:
ISSN:
Container-title:2022 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)
language:
Short-container-title:

Author:

Murayama Yoshiki¹,Kijima Masato¹,Yamashita Takehiko¹,Takezaki Yusuke¹,Miyata Masanori¹,Isobe Ryuta¹,Watanabe Hirobumi²

Affiliation:

1. Nisshinbo Micro Devices Inc.,Manufacturing Division 1,Yashiro Engineer Department,Tokyo,Japan

2. W. T. C. Hyogo,Japan

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9975349/9975304/09975377.pdf?arnumber=9975377

Reference12 articles.

1. Critical Discussion of the Front–Back Gate Coupling Effect on the Low-Frequency Noise in Fully Depleted SOI MOSFETs

2. Noise and Fluctuations in Fully Depleted Silicon-on-Insulator MOSFETs

3. Unified model of hole trapping, 1/f noise, and thermally stimulated current in MOS devices

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Characterization of larger-single-Lorentzian noise deviated from 1/f characteristics detected by a power-spectral-density-integration method;Japanese Journal of Applied Physics;2024-03-01

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370

www.globalauthorid.com

TOP