Effect of Post Deposition Annealing on Electrical Properties of GaOx/Si structure by Mist Chemical Vapor Deposition Method
Author:
Affiliation:
1. University of Hyogo,Graduate School of Engineering,Hyogo,Japan,671-2280
Funder
Ministry of Education
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/9975349/9975304/09975375.pdf?arnumber=9975375
Reference19 articles.
1. Field-effect passivation of the SiO2Si interface
2. Passivation mechanism of thermal atomic layer-deposited Al2O3 films on silicon at different annealing temperatures
3. On the Control of the Fixed Charge Densities in Al2O3-Based Silicon Surface Passivation Schemes
4. Current status of Ga2O3power devices
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1. Temperature Dependence of Oxygen Annealing Effect on Electrical Properties of GaOx/Si Structure by Mist Chemical Vapor Deposition;2023 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK);2023-11-16
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