A 77 GHz (W-band) SiGe LNA with a 6.2 dB Noise Figure and Gain Adjustable to 33 dB-Reference-Cited by-同舟云学术

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A 77 GHz (W-band) SiGe LNA with a 6.2 dB Noise Figure and Gain Adjustable to 33 dB

Published:2006-10 Issue: Volume: Page:
ISSN:
Container-title:2006 Bipolar/BiCMOS Circuits and Technology Meeting
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Author:

Reuter Ralf,Yin Yi

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx5/4100194/4100195/04100200.pdf?arnumber=4100200

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A G-Band SiGe BiCMOS LNA With an On-Chip and Compact Temperature Compensation Biasing Circuit;2023 IEEE/MTT-S International Microwave Symposium - IMS 2023;2023-06-11

2. A SiGe transceiver chipset for automotive radar applications using wideband modulation sequences;International Journal of Microwave and Wireless Technologies;2019-05-31

3. mm-Wave noise modeling in advanced SiGe and InP HBTs;Journal of Computational Electronics;2015-02-13

4. Differential 77-GHz Current Re-Use Low-Noise Amplifier;SpringerBriefs in Electrical and Computer Engineering;2012

5. Introduction;SpringerBriefs in Electrical and Computer Engineering;2012

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