Dielectric reliability and material properties of Al/sub 2/O/sub 3/ in metal insulator metal capacitors (MIMCAP) for RF bipolar technologies in comparison to SiO/sub 2/, SiN and Ta/sub 2/O/sub 5/-Reference-Cited by-同舟云学术

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Dielectric reliability and material properties of Al/sub 2/O/sub 3/ in metal insulator metal capacitors (MIMCAP) for RF bipolar technologies in comparison to SiO/sub 2/, SiN and Ta/sub 2/O/sub 5/

Published:2003 Issue: Volume: Page:
ISSN:
Container-title:Proceedings of the 2003 Bipolar/BiCMOS Circuits and Technology Meeting (IEEE Cat No 03CH37440) BIPOL-03
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Author:

Allers ,Brenner ,Schrenk

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx5/8978/28492/01274930.pdf?arnumber=1274930

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Reliability of PZT Capacitors;Ferroelectric Dielectrics Integrated on Silicon;2013-02-27

2. Intrinsic and extrinsic reliability of a serial connection of capacitors;Microelectronics Reliability;2010-06

3. The Impact of Dielectric Material and Temperature on Dielectric Charging in RF MEMS Capacitive Switches;NATO Science for Peace and Security Series B: Physics and Biophysics;2010

4. A high-performance trench capacitor integrated in a passive integration technology;Semiconductor Science and Technology;2008-12-12

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