Monolayer-MoS<sub>2</sub> Stacked Nanosheet Channel with C-type Metal Contact-Reference-Cited by-同舟云学术

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Monolayer-MoS₂ Stacked Nanosheet Channel with C-type Metal Contact

Published:2023-12-09 Issue: Volume: Page:
ISSN:
Container-title:2023 International Electron Devices Meeting (IEDM)
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Author:

Chung Yun-Yan¹,Yun Wei-Sheng¹,Chou Bo-Jhih²,Hsu Chen-Feng¹,Yu Shao-Ming¹,Arutchelvan G.¹,Li Ming-Yang¹,Lee Tsung-En¹,Lin Bo-Jiun¹,Li Chen-Yi²,Wei Aslan¹,Sathaiya D. Mahaveer¹,Chung Cheng-Ting¹,Liew San-Lin¹,Hou Vincent D.-H.¹,Chang Wen-Hao³,Liu Bo-Heng⁴,Chen Chien-Wei⁴,Su Chien-Ying⁴,Kei Chi-Chung⁴,Cai Jin¹,Wu Chung-Cheng¹,Wu Jeff¹,Lee Tung-Ying¹,Chien Chao-Hsin²,Cheng Chao-Ching¹,Radu Iuliana P.¹

Affiliation:

1. Taiwan SemiconductorManufacturing Company,Hsinchu,Taiwan

2. National Yang Ming Chiao Tung University,Institute of Electronics,Hsinchu,Taiwan

3. National Yang Ming Chiao Tung University,Department of Electrophysics,Hsinchu,Taiwan

4. National Applied Research Laboratories,Taiwan Instrument Research Institute,Hsinchu,Taiwan

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10413659/10413660/10413837.pdf?arnumber=10413837

Reference9 articles.

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Two-Dimensional Semiconductors for State-of-the-Art Complementary Field-Effect Transistors and Integrated Circuits;Nanomaterials;2024-08-28

2. Low Contact Resistance on Monolayer MoS₂ Field-Effect Transistors Achieved by CMOS-Compatible Metal Contacts;ACS Nano;2024-08-07

3. Fluoride dielectrics for 2D transistors;Nature Nanotechnology;2024-07

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