Effect of substrate biasing on Si/SiGe heterostructure MOSFETs for low-power circuit applications-Reference-Cited by-同舟云学术

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Effect of substrate biasing on Si/SiGe heterostructure MOSFETs for low-power circuit applications

Published:2003-07 Issue:7 Volume:24 Page:454-456
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Pei-Wen Li ,Wei-Ming Liao ,Ching-Chieh Shih ,Tine-Shang Kuo ,Li-Shyue Lai ,Yang-Tai Tseng ,Tsai M.-J.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/55/27369/01217295.pdf?arnumber=1217295

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Buried-channel SiGe HMODFET device potential for micropower applications;Solid-State Electronics;2004-08

2. Analogue micropower FET techniques review;Semiconductor Science and Technology;2004-05-19

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