1. High fmax n-type Si/SiGe MODFETs;Gluck;Electron. Lett.,1997
2. Michelakis K, Despotopoulos S, Gaspari V, Vilches A, Fobelets K, Papavassiliou C. SiGe virtual substrate HMOS transistor for analogue applications. In: First International SiGe Technology and Device Meeting (ISTDM 2003), January 2003. Also accepted for publication in a future regular issue of Applied Surface Science
3. Fabrication and properties of n-channel SiGe/Si modulation doped field-effect transistors grown by MBE;Daembkes;IEDM Techn. Dig.,1985
4. Papavassiliou C, Fobelets K, Toumazou C. SiGe hetero-FET potential for micro-power applications. Invited paper, IEICE Trans Electron, E00-A(2000)
5. Optimised n-channelSi/SiGe HFETs design for VTH shift immunity;Jeamsaksiri;Solid State Electron.,2002