A comprehensive study of hot-carrier instability in p- and n-type poly-Si gated MOSFET's-Reference-Cited by-同舟云学术

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A comprehensive study of hot-carrier instability in p- and n-type poly-Si gated MOSFET's

Published:1994-05 Issue:5 Volume:41 Page:675-680
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Hsu C.C.-H.,Duen-Shun Wen ,Wordeman M.R.,Yuan Taur ,Ning T.H.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx1/16/7054/00285016.pdf?arnumber=285016

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