Design of Sense Amplifier for Wide Voltage Range Operation of Split Supply Memories in 22nm HKMG CMOS Technology
Author:
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/9102708/9105359/09105364.pdf?arnumber=9105364
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Design of High-Speed, Low-Power Sensing Circuits for Nano-Scale Embedded Memory;Sensors;2023-12-19
2. A Common Mode Insensitive Process Tolerant Sense Amplifier Design for In Memory Compute Applications in 65nm LSTP Technology;2023 36th International Conference on VLSI Design and 2023 22nd International Conference on Embedded Systems (VLSID);2023-01
3. A Sense Amplifier Based Bulk Built-In Current Sensor for Detecting Laser-Induced Currents;2023 36th International Conference on VLSI Design and 2023 22nd International Conference on Embedded Systems (VLSID);2023-01
4. Voltage Boosted Schmitt Trigger Sense Amplifier (VBSTSA) With Improved Offset And Reaction Time For High Speed SRAMs;2023 36th International Conference on VLSI Design and 2023 22nd International Conference on Embedded Systems (VLSID);2023-01
5. An offset cancellation technique for SRAM sense amplifier based on relation of the delay and offset;Microelectronics Journal;2022-10
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