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Investigation of Gallium Nitride Devices in High-Frequency LLC Resonant Converters

  • Published:2017-01 Issue:1 Volume:32 Page:571-583
  • ISSN:0885-8993
  • Container-title:IEEE Transactions on Power Electronics
  • language:
  • Short-container-title:IEEE Trans. Power Electron.

Author:

Zhang WeiminORCID,Wang Fred,Costinett Daniel J.,Tolbert Leon M.,Blalock Benjamin J.

Funder

Engineering Research Center Program of the National Science Foundation and DOE under NSF

Ultra-wide-area Resilient Electric Energy Transmission Networks (CURENT) Industry Partnership Program

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering

Cited by 105 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Vertical LLC Converter for High-Current Datacenter Application;2024 IEEE 10th International Power Electronics and Motion Control Conference (IPEMC2024-ECCE Asia);2024-05-17

2. Fractional-Order Equivalent Model for Dynamic On-Resistance of GaN HEMTs;2024 IEEE 7th International Electrical and Energy Conference (CIEEC);2024-05-10

3. A Self-Consistent Approach Based on Bayesian Deconvolution for Trapping Time Constant Analysis: A Demonstration to Analyze ΔV TH Transients in p-GaN Gate Power HEMTs;IEEE Transactions on Electron Devices;2024-03

4. Integrated Magnetic Design for High Power Density Converter;2024 IEEE Applied Power Electronics Conference and Exposition (APEC);2024-02-25

5. Mathematical Model-Based Analysis and Mitigation of GaN Switching Oscillations;IEEE Access;2024
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