Mathematical Model-Based Analysis and Mitigation of GaN Switching Oscillations-Reference-Cited by-同舟云学术

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Mathematical Model-Based Analysis and Mitigation of GaN Switching Oscillations

Published:2024 Issue: Volume:12 Page:55551-55567
ISSN:2169-3536
Container-title:IEEE Access
language:
Short-container-title:IEEE Access

Author:

Faizan Muhammad¹^ORCID,Han Kai²^ORCID,Wang Xiaolei¹^ORCID,Yousaf Muhammad Zain³^ORCID

Affiliation:

1. Institute of Microelectronics, Chinese Academy of Sciences, Beijing, China

2. School of Physics and Electronic Information, Weifang University, Weifang, China

3. School of Electrical and Information Engineering, Hubei University of Automotive Technology, Shiyan, China

Funder

Shandong Provincial Natural Science Foundation

APA

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Link

http://xplorestaging.ieee.org/ielx7/6287639/10380310/10400472.pdf?arnumber=10400472

Reference44 articles.

1. Emerging GaN technologies for power, RF, digital, and quantum computing applications: Recent advances and prospects

2. Design and Comparative Analysis of an Ultra-Highly Efficient, Compact Half-Bridge LLC Resonant GaN Converter for Low-Power Applications

3. GaN Transistors for Efficient Power Conversion

4. Design and Implementation of 1 MHz DC-DC LLC Resonant Converter with GaN Enhancement Mode HEMT

5. Tri-Gate GaN Junction HEMTs: Physics and Performance Space

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