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Tri-Gate GaN Junction HEMTs: Physics and Performance Space

  • Published:2021-10 Issue:10 Volume:68 Page:4854-4861
  • ISSN:0018-9383
  • Container-title:IEEE Transactions on Electron Devices
  • language:
  • Short-container-title:IEEE Trans. Electron Devices

Author:

Ma Yunwei,Xiao MingORCID,Du Zhonghao,Wang Han,Zhang YuhaoORCID

Funder

National Science Foundation

Office of Naval Research monitored by Lynn Petersen

Center for Power Electronics Systems Power Management Consortium

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Cited by 15 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Mathematical Model-Based Analysis and Mitigation of GaN Switching Oscillations;IEEE Access;2024

2. Barrier and channel thickness engineering to optimize fin height for enhancement mode Al0.3Ga0.7N/GaN FinHEMT;International Journal of Numerical Modelling: Electronic Networks, Devices and Fields;2023-12-14

3. Wide‐Bandgap Nickel Oxide with Tunable Acceptor Concentration for Multidimensional Power Devices;Advanced Electronic Materials;2023-12-05

4. P-Type Doping Control of Magnetron Sputtered NiO for High Voltage UWBG Device Structures;2023 IEEE 10th Workshop on Wide Bandgap Power Devices & Applications (WiPDA);2023-12-04

5. Conductivity Enhancement Induced by Confined Vicinal Hole Storage in Enhancement-mode $p$-GaN Gate Double-Channel HEMTs;2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD);2023-05-28
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