Analytical Model of the Forward Operation of 4H-SiC Vertical DMOSFET in the Safe Operating Temperature Range
Author:
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering
Link
http://xplorestaging.ieee.org/ielx7/63/7112252/06971175.pdf?arnumber=6971175
Cited by 24 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. A Semi-Physical Model of SiC MOSFETs for Improved Static Characteristic;2024 IEEE 7th International Electrical and Energy Conference (CIEEC);2024-05-10
2. On the Electro-Thermal 2D FEM Parametric Analysis of SiC Vertical MOSFET Including Gate-Oxide Charge-Trapping Thermal Dependency: Application for Fast Transient Extreme Short-Circuit Operation;2023 30th International Conference on Mixed Design of Integrated Circuits and System (MIXDES);2023-06-29
3. On the design of the channel region in 4H-SiC JBS diode through an analytical model of the potential barrier;Mathematics and Computers in Simulation;2021-05
4. Influence of temperature and dimension in a 4H-SiC vertical power MOSFET;Engineering Research Express;2020-11-11
5. Static and Transient Simulation of 4H-SiC VDMOS Using Full-Band Monte Carlo Simulation That Includes Real-Space Treatment of the Coulomb Interactions;IEEE Transactions on Electron Devices;2020-09
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3