Review of Loss Distribution, Analysis, and Measurement Techniques for GaN HEMTs-Reference-Cited by-同舟云学术

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Review of Loss Distribution, Analysis, and Measurement Techniques for GaN HEMTs

Published:2020-07 Issue:7 Volume:35 Page:7405-7418
ISSN:0885-8993
Container-title:IEEE Transactions on Power Electronics
language:
Short-container-title:IEEE Trans. Power Electron.

Author:

Gareau Jacob^ORCID,Hou Ruoyu^ORCID,Emadi Ali^ORCID

Funder

Canada Excellence Research Chairs, Government of Canada

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering

Link

http://xplorestaging.ieee.org/ielx7/63/9037388/08908740.pdf?arnumber=8908740

Cited by 62 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A new extraction method of GaN switch-HEMT small-signal model with capacitance scanning algorithm;IEICE Electronics Express;2024-09-10

2. Double π-gate AlGaN/GaN HEMT with reduced surface and buffer traps and enhanced reliability;Microelectronics Reliability;2024-08

3. Selecting Temperature Sensitive Parameter for a Transient Thermal Impedance Measurements of E-Mode Power GaN HEMT;2024 IEEE 18th International Conference on Compatibility, Power Electronics and Power Engineering (CPE-POWERENG);2024-06-24

4. Exploring GaN Semiconductors Power Losses in DAB Converter Simulation via PLECS;2024 IEEE 33rd International Symposium on Industrial Electronics (ISIE);2024-06-18

5. Models and Methods for the Analysis of PCB Crosstalk in Switch-Mode Power Supplies;2024 IEEE 28th Workshop on Signal and Power Integrity (SPI);2024-05-12

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