Online Condition Monitoring of Power MOSFET Gate Oxide Degradation Based on Miller Platform Voltage-Reference-Cited by-同舟云学术

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Online Condition Monitoring of Power MOSFET Gate Oxide Degradation Based on Miller Platform Voltage

Published:2017-06 Issue:6 Volume:32 Page:4776-4784
ISSN:0885-8993
Container-title:IEEE Transactions on Power Electronics
language:
Short-container-title:IEEE Trans. Power Electron.

Author:

Ye Xuerong,Chen Cen,Wang Yixing,Zhai Guofu,Vachtsevanos George J.

Funder

State Administration of Science, Technology and Industry

National Defense of China

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering

Link

http://xplorestaging.ieee.org/ielx7/63/7851098/07551167.pdf?arnumber=7551167

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2. Failure Characterization of Discrete SiC MOSFETs under Forward Power Cycling Test;Energies;2024-05-24

3. SiC MOSFET Degradation Monitoring based on Source Inductance Voltage;2024 IEEE 10th International Power Electronics and Motion Control Conference (IPEMC2024-ECCE Asia);2024-05-17

4. Investigation of Threshold Voltage Instability of SiC MOSFETs Under Different Gate Voltage Sequences;IEEE Transactions on Electron Devices;2024-04

5. A Multi-Metrics In Situ Aging Detector for SiC Power MOSFET Modules with Full Driver-Integration Capability;2024 IEEE Applied Power Electronics Conference and Exposition (APEC);2024-02-25

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