A 0.4-/spl mu/m 3.3-V 1T1C 4-Mb nonvolatile ferroelectric RAM with fixed bitline reference voltage scheme and data protection circuit-Reference-Cited by-同舟云学术

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A 0.4-/spl mu/m 3.3-V 1T1C 4-Mb nonvolatile ferroelectric RAM with fixed bitline reference voltage scheme and data protection circuit

Published:2000-11 Issue:11 Volume:35 Page:1690-1694
ISSN:0018-9200
Container-title:IEEE Journal of Solid-State Circuits
language:
Short-container-title:IEEE J. Solid-State Circuits

Author:

Byung-Gil Jeon ,Mun-Kyu Choi ,Yoonjong Song ,Seung-Kyu Oh ,Yeonbae Chung ,Kang-Deog Suh ,Kinam Kim

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering

Link

http://xplorestaging.ieee.org/ielx5/4/19075/00881216.pdf?arnumber=881216

Cited by 18 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. An asymmetrical sensing scheme for 1T1C FRAM to increase the sense margin;Journal of Semiconductors;2010-11

2. Novel Capacitor Structure Using Sidewall Spacer for Highly Reliable Ferroelectric Random Access Memory Device;Japanese Journal of Applied Physics;2004-04-27

3. A 64-Mb Embedded FRAM Utilizing a 130-nm 5LM Cu/FSG Logic Process;IEEE Journal of Solid-State Circuits;2004-04

4. Design of 0.25 μm 2.7 V 2T2C 4 Mb asynchronous ferroelectric random access memory (FRAM) for mobile applications;Current Applied Physics;2004-02

5. Comparison of the Ferroelectricity for 70–80 nm Thick Pb(Zr,Ti)O3 Films Deposited on (111)Ir Bottom Electrodes at Different Temperatures by MOCVD;Integrated Ferroelectrics;2004-01

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