Characterization of deep levels in Pt-GaN Schottky diodes deposited on intermediate-temperature buffer layers-Reference-Cited by-同舟云学术

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Characterization of deep levels in Pt-GaN Schottky diodes deposited on intermediate-temperature buffer layers

Published:2002 Issue:2 Volume:49 Page:314-318
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Leung B.H.,Chan N.H.,Fong W.K.,Zhu C.F.,Ng S.W.,Lui H.F.,Tong K.Y.,Surya C.,Lu L.W.,Ge W.K.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/16/21131/00981223.pdf?arnumber=981223

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Temperature dependence of electrical characteristics of Pt/GaN Schottky diode fabricated by UHV e-beam evaporation;Nanoscale Research Letters;2013-11-15

2. Low-frequency excess noise characterizations of laser-assisted de-bonded GaN films;Applied Surface Science;2005-11

3. CHARACTERIZATIONS OF LOW-FREQUENCY NOISE IN LASER-DEBONDED HVPE-GROWN GaN THIN FILMS;Fluctuation and Noise Letters;2004-09

4. Characterization of low-frequency noise in molecular beam epitaxy-grown GaN epilayers deposited on double buffer layers;Journal of Applied Physics;2003-07

5. Study of low-frequency noise in GaN-on-Si films obtained by laser-assisted debonding;SPIE Proceedings;2003-05-12

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