Low-frequency excess noise characterizations of laser-assisted de-bonded GaN films-Reference-Cited by-同舟云学术

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Low-frequency excess noise characterizations of laser-assisted de-bonded GaN films

Published:2005-11 Issue:4 Volume:252 Page:1049-1056
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Chan C.P.,Leung B.H.,Fong W.K.,Lai P.K.,Loke Y.H.,Surya C.,Yue T.M.,Man H.C.,Xiu X.,Zhang R.

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference36 articles.

1. GaN-based optoelectronics on silicon substrates;Krost;Mater. Sci. Eng. B,2002

2. GaN-based optoelectronic device on sapphire and Si substrates;Umeno;Mater. Sci. Semicond. Process.,2001

3. Comprehensive characterization of metal–semiconductor–metal ultraviolet photodetectors fabricated on single-crystal GaN;Carrano;J. Appl. Phys.,2000

4. Growth and device applications of III-nitrides by MBE;Moustakas;J. Cryst. Growth,2001

5. The Semiconductor Industry Association (SIA), International Technology Roadmap for Semiconductors, 1999 ed.

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. GaN/metal/Si heterostructure fabricated by metal bonding and laser lift-off;Journal of Semiconductors;2009-12

2. DC characterization of laser-debonded GaN HEMTs;physica status solidi (a);2007-03

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