Wafer-bonded GaInP/GaAs/GaInAs//GaSb four-junction solar cells with 43.8% efficiency under concentration
Author:
Affiliation:
1. Fraunhofer Institute for Solar Energy Systems ISE,Freiburg,Germany
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/9300349/9300350/09300633.pdf?arnumber=9300633
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Modeling of Multijunction Solar Cells InGaAs/InGaP/GaAs/GeSi for Improving the Efficiency of PV Modules by 43%;Lecture Notes in Electrical Engineering;2024
2. Fault Diagnosis for PV Modules Based on AlexNet and Symmetrized Dot Pattern;Energies;2023-11-14
3. A Fault Detection Method Based on CNN and Symmetrized Dot Pattern for PV Modules;Energies;2022-09-03
4. Light‐trapping and spectral modulation to increase the conversion efficiency of triple‐junction GaAs solar cells using antireflective coating comprising a periodic array of cone‐shaped TiO 2 structures;International Journal of Energy Research;2021-09-07
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