Modeling of Multijunction Solar Cells InGaAs/InGaP/GaAs/GeSi for Improving the Efficiency of PV Modules by 43%
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Publisher
Springer Nature Singapore
Link
https://link.springer.com/content/pdf/10.1007/978-981-99-9005-4_5
Reference9 articles.
1. Predan F, Franke A, Hoehn O, Lackner D, Helmers H, Siefer G, Bett AW, Dimroth F (2020) Wafer-bonded GaInP/GaAs/GaInAs//GaSb four-junction solar cells with 43.8% efficiency under concentration. In: 2020 47th IEEE photovoltaic specialists conference (PVSC). IEEE, pp 0250–0252
2. Kawakita S, Imaizumi M, Makita K, Nishinaga J, Sugaya T, Shibata H, Sato S, Ohshima T (2016) High efficiency and radiation resistant InGaP/GaAs//CIGS stacked solar cells for space applications. In: 2016 IEEE 43rd photovoltaic specialists conference (PVSC). IEEE, pp 2574–2577
3. Essig S, Benick J, Schachtner M, Wekkeli A, Hermle M, Dimroth F (2015) Wafer-bonded GaInP/GaAs//Si solar cells with 30% efficiency under concentrated sunlight. IEEE J Photovoltaics 5(3):977–981
4. Hinzer K, Beattie MN, Wilkins MM, Valdivia CE (2018) Modeling techniques for multijunction solar cells. In: 2018 International conference on numerical simulation of optoelectronic devices (NUSOD). IEEE, pp 133–134
5. Hinojosa M, García I, Algora C, Martinez O (2017) MOVPE issues in the development of ordered GaInP metamorphic buffers for multijunction solar cells. In: 2017 Spanish conference on electron devices (CDE). IEEE, pp 1–4
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